• EV Tech Insider
  • Posts
  • Transphorm’s TOLL FETs Position GaN as Optimal Devices for Power Hungry AI Applications

Transphorm’s TOLL FETs Position GaN as Optimal Devices for Power Hungry AI Applications

October 12, 2023

– Transphorm has introduced three SuperGaN® FETs in TOLL packages with on-resistances of 35, 50, and 72 milliohms. These devices can be used as replacements for any e-mode TOLL solution, supporting high power applications such as AI systems, data centers, and electric vehicles.– The SuperGaN TOLL FETs are JEDEC qualified and are easy to drive with commonly used off-the-shelf gate drivers. They can be used in various AC-to-DC, DC-to-DC, and DC-to-AC topologies for increased power density while reducing system size, weight, and overall cost.

Transphorm has launched three new SuperGaN® FETs in TOLL packages. These devices feature on-resistances of 35, 50, and 72 milliohms and can be used as drop-in replacements for any e-mode TOLL solution. They offer high voltage dynamic (switching) on-resistance reliability that is usually lacking in foundry-based e-mode GaN offerings.

These surface mount devices support power applications operating within a range of 1 to 3 kilowatts, found in high performance segments such as AI, server, telecom, data center, energy and industrial markets. They are also optimal for AI systems that rely on GPUs requiring 10 to 15 times the power of traditional CPUs.

The SuperGaN TOLL FETs are also suitable for electric vehicle-based DC-to-DC converters and onboard chargers. The underlying SuperGaN die is already automotive (AEC-Q101) qualified.

Transphorm’s SuperGaN devices lead the market with unmatched reliability at < 0.03 FIT, gate safety margin at ± 20 V, noise immunity at 4 V and temperature coefficient of resistance (TCR) at 20% lower than e-mode. The 650 V SuperGaN TOLL devices are JEDEC qualified and easy to drive with commonly used gate drivers. They can be used in various hard- and soft-switching AC-to-DC, DC-to-DC, and DC-to-AC topologies to increase power density while reducing system size, weight, and overall cost.Transphorm's introduction of these SuperGaN FETs will enable more efficient and reliable power systems for electric vehicles. This advancement will contribute to increased power density and reduced system size and cost in the electric vehicle industry.