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- STMicroelectronics begins volume production of PowerGaN devices for slimmer, cooler, and more efficient power products – ST News
STMicroelectronics begins volume production of PowerGaN devices for slimmer, cooler, and more efficient power products – ST News
– STMicroelectronics has initiated volume production of e-mode PowerGaN HEMT devices, enhancing efficiency in power-conversion systems.– The first two products, the SGT120R65AL and SGT65R65AL, offer higher efficiency, lower operating temperatures, and extended life time. More PowerGaN variants are expected in the future.
Gallium nitride (GaN)-based products deliver improved energy efficiency and facilitate compact system designs across consumer, industrial, and automotive applications. STMicroelectronics has entered volume production of e-mode PowerGaN HEMT devices that streamline the design of high-efficiency power-conversion systems. The STPOWER GaN transistors elevate performance in numerous applications including wall adapters, chargers, lighting systems, industrial power supplies, renewable energy applications, and automotive electrification.
The inaugural products of the family, the SGT120R65AL and SGT65R65AL, are industrial-approved 650V normally-off G-HEMT in a PowerFLAT 5×6 HV surface-mount package. These have current ratings of 15A and 25A with typical on-resistance (RDS(on)) of 75mΩ and 49mΩ at 25°C. Total gate charge of 3nC and 5.4nC and low parasitic capacitances ensure minimal energy losses during turn-on/turn-off. A Kelvin source connection enables optimized gate driving. Besides reducing size and weight of power supplies and adapters, these new GaN transistors offer higher efficiency, lower operating temperatures, and extended life time.
ST plans to launch new PowerGaN variants such as automotive-approved devices and additional power-package options including PowerFLAT 8×8 DSC and LFPAK 12×12 for high power applications in the upcoming months. ST’s G-HEMT devices ease the transition to GaN wide-bandgap technology in power conversion. GaN transistors with the same breakdown voltage and RDS(on) as silicon alternatives can achieve lower total gate charge and parasitic capacitances, with zero reverse-recovery charge. These characteristics improve efficiency and switching performance, allowing higher switching frequency that enables smaller passive components thereby increasing power density.
ST has a robust production capacity for PowerGaN discrete products to meet customer demand for quick ramp up to volume manufacturing. The SGT120R65AL and SGT65R65AL in PowerFLAT 5×6 HV are available now.
The introduction of these devices will have a significant impact on the electric vehicle industry by providing more efficient and compact power conversion options. This will likely facilitate the development of smaller, higher-performing applications.