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Renesas acquiring Transphorm to expand their GaN tech, and announces new SiC production line

January 16, 2024

Renesas Electronics Corporation will acquire Transphorm, Inc. for $5.10 per share in cash, for approximately $339 million.

The acquisition will enable Renesas to incorporate in-house GaN technology, a key next-generation material for power semiconductors, expanding its reach into fast-growing markets such as EVs, computing (data centers, AI, infrastructure), renewable energy, industrial power conversion, and fast chargers/adapters.

Renesas has also announced the establishment of an in-house silicon carbide (SiC) production line, supported by a 10-year SiC wafer supply agreement. The company aims to further expand its wide bandgap (WBG) portfolio with Transphorm’s expertise in GaN, an emerging material that enables higher switching frequency, lower power losses, and smaller form factors.

Renesas will implement Transphorm’s auto-qualified GaN technology to develop new enhanced power solution offerings, such as X-in-1 powertrain solutions for EVs, along with computing, energy, industrial, and consumer applications.

The transaction is expected to close in the second half of calendar year 2024, subject to Transphorm stockholder approval, required regulatory clearances, and the satisfaction of other customary closing conditions.