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Nexperia releases their first SiC MOSFETs, for use in EV charging stations

January 09, 2024

Nexperia has announced the release of its first silicon carbide (SiC) MOSFETs.

The two 1200 V discrete devices, NSF040120L3A0 and NSF080120L3A0, are packaged in 3-pin TO-247 with RDS(on) values of 40 mΩ and 80 mΩ. These devices are the first in a series of planned releases that will expand Nexperia’s SiC MOSFET portfolio to include devices with a variety of RDS(on) values in a choice of through-hole and surface mounted packages. The release is in response to market demand for high performance SiC MOSFETs in industrial applications such as electric vehicle (EV) charging piles, uninterruptible power supplies (UPS), and inverters for solar and energy storage systems (ESS).

Nexperia’s SiC MOSFETs offer have high temperature stability, with the nominal value of RDS(on) increasing by only 38% over an operating temperature range from 25°C to 175°C. This is a significant improvement over many currently available SiC devices. The MOSFETs also exhibit a very low total gate charge (QG), which reduces gate drive losses. Additionally, Nexperia balanced gate charge to have an exceptionally low ratio of QGD to QGS, a characteristic which increases device immunity against parasitic turn-on.

The SiC MOSFETs also offer ultra-low spread in device-to device threshold voltage, VGS(th), which allows very well-balanced current-carrying performance under static and dynamic conditions when devices are operated in parallel. Furthermore, low body diode forward voltage (VSD) is a parameter which increases device robustness and efficiency, while also relaxing the dead-time requirement for asynchronous rectification and free wheel operation.

Nexperia is also planning the future release of automotive grade MOSFETs. The NSF040120L3A0 and NSF080120L3A0 are available in production quantities now.

Katrin Feurle, Senior Director & Head of Product Group SiC at Nexperia, said, “With these inaugural products, Nexperia and Mitsubishi Electric wanted to bring true innovation to a market that has been crying out for more wide-bandgap device suppliers. Nexperia can now offer SiC MOSFET devices which offer best-in-class performance across several parameters, including high RDS(on) temperature stability, low body diode voltage drop, tight threshold voltage specification as well as a very well-balanced gate charge ratio making the device safe against parasitic turn on. This is the opening chapter in our commitment to producing the highest quality SiC MOSFETs in our partnership with Mitsubishi Electric. Together we will undoubtedly push the boundaries of SiC device performance over the coming years”.

Toru Iwagami, Senior General Manger, Power Device Works, Semiconductor & Device Group in Mitsubishi Electric, added, “Together with Nexperia, we’re thrilled to introduce these new SiC MOSFETs as the first product of our partnership. Mitsubishi Electric has accumulated superior expertise of SiC power semiconductors, and our devices deliver a unique balance of characteristics.”