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- New 62mm package in Infineon’s CoolSiCTM portfolio helps engineers to achieve higher efficiency and power density
New 62mm package in Infineon’s CoolSiCTM portfolio helps engineers to achieve higher efficiency and power density
Infineon Technologies AG announced the expansion of its CoolSiC 1200 V and 2000 V MOSFET module families with a new industry-standard package. The 62mm device, designed in half-bridge topology, is based on the recently introduced M1H silicon carbide (SiC) MOSFET technology. This package allows the use of SiC for mid-power applications from 250 kW, where silicon reaches the limits of power density with IGBT technology. The applications now include solar, server, energy storage, EV chargers, traction, commercial induction cooking, and power conversion systems.
The M1H technology provides a wider gate voltage window, ensuring robustness to driver and layout-induced voltage spikes at the gate without restrictions, even at high switching frequencies. The devices also have very low switching and transmission losses, minimizing cooling requirements. With a high reverse voltage, these devices meet another requirement of modern system design. Utilizing Infineon’s CoolSiC chip technology, converter designs can be more efficient, the nominal power per inverter can be increased, and system costs can be reduced.
The package features a rugged mechanical design with baseplate and screw connections, optimized for high system availability, minimum service costs, and downtime losses. It achieves outstanding reliability through high thermal cycling capability and a continuous operating temperature (T vjop) of 150°C. The symmetrical internal package design provides identical switching conditions for the upper and lower switches. Optionally, the thermal performance of the module can be further enhanced with pre-applied thermal interface material (TIM).
The CoolSiC 62mm package MOSFETs are available in 1200 V variants of 5 mΩ/180 A, 2 mΩ/420 A, and 1 mΩ/560 A. The 2000 V portfolio will include the 4 mΩ/300 A and 3 mΩ/400 A variants. The portfolio will be completed in Q1 2024 with the 1200 V/3 mΩ and 2000 V/5 mΩ variants. An evaluation board is available for rapid characterization of the modules (double pulse/continuous operation). For ease of use, it provides flexible adjustment of the gate voltage and gate resistors. It can also be used as a reference design for driver boards for volume production. More information is available at http://www.infineon.com/SiC.
For more information about Infineon’s contribution to energy efficiency, visit http://www.infineon.com/green-energy.