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New 600 V discrete IGBTs from Nexperia for class-leading efficiency in power applications

October 12, 2023

– Nexperia has launched a range of 600 V IGBTs, starting with the 30 A NGW30T60M3DF, to meet the growing demand for efficient, high-voltage switching devices.– The 600 V IGBTs feature a robust, cost-effective carrier-stored trench-gate advanced field-stop construction, offering low conduction and switching loss performance with high ruggedness in operating temperatures up to 175°C.

Nexperia has introduced its first insulated gate bipolar transistor (IGBT) to the market: the 600 V NGW30T60M3DF. This move expands Nexperia’s portfolio in response to rising demand for high-efficiency, high-voltage switches. They are designed for power conversion and motor drive applications, including industrial motor drives like servo motors ranging from 5 to 20 kW (20 kHz), robotics, elevators, operating grippers, in-line manufacturing, power inverters, uninterruptible power supply (UPS), photovoltaic (PV) strings, EV-charging, and induction heating and welding.

The new IGBTs utilize a robust carrier-stored trench-gate advanced field-stop construction. This design ensures low conduction and switching losses while maintaining robustness up to 175°C. It enhances the efficiency and reliability of power inverters, induction heaters, welding equipment and industrial applications.

Designers can select from medium speed (M3) or high-speed (H3) series IGBTs. These devices feature tight parameter distributions for safe parallel connection. Lower thermal resistance compared to competitors allows them to deliver higher output power. These IGBTs are fully rated as soft fast reverse-recovery diodes, making them suitable for rectifier and bi-directional circuit applications or overcurrent protection.

Dr. Ke Jiang, General Manager Business Group Insulated-Gate Bipolar Transistors & Modules at Nexperia said: “With the release of these IGBTs, Nexperia provides designers with a greater choice of power-switching devices for a broad range of power applications”. He noted that IGBTs are an ideal addition to Nexperia’s existing range of CMOS and wide-bandgap switching devices.

The IGBTs come in a standard, lead-free, TO247-3L package and are HV-H3TRB qualified for outdoor applications. Nexperia anticipates releasing a series of 1200 V IGBTs after this initial launch.

This introduction of 600V IGBTs by Nexperia will significantly influence the electric vehicle industry by offering robust and efficient high-voltage switching devices, thereby enhancing the efficiency and reliability of power conversion and motor drive applications.