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Infineon’s new CoolSiCTM MOSFETs 2000 V for EV charging stations

March 17, 2024

Infineon Technologies has introduced the new CoolSiC MOSFETs 2000 V in the TO-247PLUS-4-HCC package. This product is designed to meet the demand for increased power density without compromising system reliability, even under high voltage and switching frequency conditions. The CoolSiC MOSFETs offer a higher DC link voltage, allowing for increased power without a corresponding increase in current. This is the first discrete silicon carbide device with a breakdown voltage of 2000 V on the market. It comes in a TO-247PLUS-4-HCC package with a creepage distance of 14 mm and clearance distance of 5.4 mm. The devices, with their low switching losses, are suitable for solar (e.g. string inverters), energy storage systems, and electric vehicle charging applications.

The CoolSiC MOSFET 2000 V product family is well-suited for high DC link systems with up to 1500 V DC. Compared to 1700 V SiC MOSFETs, these devices also provide a sufficiently high overvoltage margin for 1500 V DC systems. The CoolSiC MOSFETs deliver a benchmark gate threshold voltage of 4.5 V and are equipped with a robust body diode for hard commutation. Thanks to the .XT connection technology, the components offer excellent thermal performance and are highly resistant to humidity.

In addition to the CoolSiC MOSFETs 2000 V, Infineon will soon be launching the matching CoolSiC diodes. The first launch will be the 2000 V diode portfolio in the TO-247PLUS 4-pin package in the third quarter of 2024, followed by the 2000 V CoolSiC diode portfolio in the TO-247-2 package in the final quarter of 2024. These diodes are particularly suitable for solar applications. A matching gate driver portfolio is also available.

The CoolSiC MOSFET 2000 V product family is now available. Infineon also offers a suitable evaluation board: the EVAL-COOLSIC-2KVHCC. Developers can use the board as a precise universal test platform to evaluate all CoolSiC MOSFETs and diodes 2000 V and the EiceDRIVER Compact Single Channel Isolated Gate Driver 1ED31xx product family through double pulse or continuous PWM operation. More information is available at http://www.infineon.com/coolsic-mosfet-discretes.